Observation of Si 2p Core‐Level Shift in Si/High‐κ Dielectric Interfaces Containing a Negative Charge

Negative static charge and induced internal electric field have often been observed in the interfaces between silicon high-κ dielectrics, for example Al2O3 HfO2. The provides either beneficial (e.g., field-effect passivation) or harmful voltage instability) effect depending on application. Different intrinsic extrinsic defects dielectric film interface suggested to cause but this issue is still unresolved. Here spectroscopic evidence presented a structural change where present. correlation Si core-level shift negative reveals role of bonding environment modification SiO2 phase. result good agreement with recent theoretical models, which relate formation interfacial atomic transformations together resulting acceptor doping SiO2.